Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment
نویسندگان
چکیده
1 Device fabrication details.
منابع مشابه
Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride.
Flexible graphene field-effect transistors (GFETs) are fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a self-aligned fabrication scheme. Flexible GFETs fabricated with channel lengths of 2 μm demonstrate exceptional room-temperature carrier mobility (μFE = 10 000 cm(2) V(-1) s(-1)), strong current saturation characteristics (peak output resist...
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